Hall elements can be fabricated from a variety of semiconductor materials, such as Ge, Si, InSb, GaAs, InAs, InAsP, and multilayer semiconductor heterostructure quantum well materials. The Hall element is a magnetic sensor based on the Hall effect. They can be used to detect magnetic fields and their changes, and can be used in a variety of applications related to magnetic fields.
Hall elements have many advantages, they are solid in structure, small in size, light in weight, long in life, easy to install, low in power consumption, high in frequency (up to 1MHZ), resistant to vibration, not afraid of dust, oil, water vapor and salt spray. Contaminated or corroded. Hall linear devices have high precision and good linearity; Hall switch devices have no contact, no wear, clear output waveform, no jitter, no rebound, high position repeatability (up to μm level), and various compensations are used. And protection measures, Hall devices have a wide operating temperature range of -55 ° C ~ 150 ° C.
Hall element characteristics 1, Hall coefficient (also known as Hall constant) RHWhen the magnetic field is not too strong, the Hall potential difference UH is proportional to the product of the excitation current I and the magnetic induction B, and is inversely proportional to the thickness δ of the Hall plate, that is, UH = RH * I * B / δ, where RH is called It is the Hall coefficient, which indicates the strength of the Hall effect. Further, RH = μ * Ï, that is, the Hall constant is equal to the product of the resistivity Ï of the Hall sheet material and the electron mobility μ.
The Hall sensitivity is proportional to the Hall coefficient and inversely proportional to the thickness δ of the Hall plate, ie KH = RH / δ, which typically characterizes the Hall constant.
3, Hall rated excitation currentThe excitation current flowing when the Hall element itself rises by 10 ° C is called the rated excitation current.
4, Hall maximum allowable excitation currentThe excitation current corresponding to the maximum temperature rise allowed by the Hall element is referred to as the maximum allowable excitation current.
5, Hall input resistanceThe value of the resistance between the Hall excitation electrodes is called the input resistance.
6, Hall output resistanceThe resistance value between the Hall output electrodes is called the output resistance.
7, the temperature coefficient of resistance of the Hall elementThe relative rate of change of resistance, measured by α, in units of %/°C, for every 1 °C change in ambient temperature without applying a magnetic field.
8, Hall non-equal potential (also known as Hall offset zero)In the absence of an applied magnetic field and the Hall excitation current is I, the measured Hall potential difference at the output end is referred to as the unequal potential.
In the case where the applied magnetic field and the Hall excitation current are I, the measured Hall potential difference at the output end is referred to as the Hall output voltage.
10, Hall voltage output ratioHall ratio of non-equal potential to Hall output potential
11, Hall parasitic DC potentialWhen the applied magnetic field is zero and the Hall element is excited by AC, the Hall electrode output has a constant current potential, which is called a parasitic DC potential, in addition to the AC unequal potential.
12, Hall is not equipotentialIn the case where there is no applied magnetic field and the Hall excitation current is I, the relative rate of change of the unequal potential is changed every 1 °C of the ambient temperature.
In the case where the applied magnetic field and the Hall excitation current are I, the relative rate of change of the unequal potential is changed every 1 °C of the ambient temperature. It is also the temperature coefficient of the Hall coefficient.
14, thermal resistance RthFor every 1W increase in power consumption of a Hall element, the temperature rise of the Hall element is called its thermal resistance, which reflects the ease with which the component dissipates heat.
The unit is: Celsius / w
Brushless motor Hall sensor AH44E
Switching Hall integrated components for position sensors in brushless motors.
Pin definition (the marked side faces towards itself): (left) power supply; (middle) ground; (right) signal output
Volume (mm): 4.1*3.0*1.5
Pay attention to reduce stress and anti-static during installation

From the principle:
VH=KHIB
KH is called sensitivity. The unit is mV/(mA.G)
The actual Hall element is usually divided into two types: switch type or linear type. Switch type generally does not have nominal sensitivity. Linear type The current I is usually determined by an internal circuit. Therefore, the definition of sensitivity has changed.
VH = KHB. Unit becomes mV/G
Generally at 1~5mV/G, assuming a supply current of 10mA, it can also be converted to:
KH=0.1~0.5mV/(mA.G)
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