HRL Labs Prepares GaN HEMT MMICs Using AIXTRON CCS MOCVD

On November 24, 2009, AIXTRON announced that HRL Laboratories LLC had ordered a 6?2" CCS MOCVD system for Q3 this year, and the equipment will interact in the first quarter of next year.

HRL will use this system to study advanced GaN technologies, including growing millimeter-wave power GaN HEMT devices and GaN transistors for power switching. A GaN researcher at HRL said that they are interested in the quality and design of CCS MOCVD equipment, which is very suitable for their requirements. The equipment has good practicability, less carrier gas consumption, and the utilization rate of the entire material is also improved, and the number of equipment maintenance is reduced.

CCS systems are installed around the world, have a proven track record, are scalable, and are easily converted to larger systems. The AIXTRON system helps increase HRL's GaN material productivity and enables a more advanced GaN HEMT structure to meet higher process output.

HRL is the leading manufacturer of millimeter-wave GaN-based MMIC devices. At last year's CSIC conference, HRL launched a GaN MMIC product with a reputation for output power of 500mW at 95GHz.


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