The output signal of the photosensitive device of the photovoltaic detection device operating in the photovoltaic mode does not contain dark current, and is only limited by the noise of the diode itself, which is particularly advantageous for weak signal detection. Shallow junction or large-area diodes are a form of structure that can easily introduce dark current, so photovoltaic detection mode is mostly used. VOC and short-circuit current ISC are two important parameters of photovoltaic devices operating in photovoltaic mode. They are closely related to the series resistance RS and parallel resistance RSh of the device.
The PN junction in the equivalent circuit of the photovoltaic detector under lighting conditions is equivalent to the parallel connection of a constant current source with a household ladder output current of IL and an ideal diode. The forward current flowing through the diode is the leakage current ID, and the equivalent circuit corresponds to The IV equation is: I = IL-I0-V + IRSRSh (1), where V + IRS is the forward voltage drop of the PN junction, and I0 is the reverse saturation current. From formula (1), ISC can be obtained: ISC = IL-I0-ISCRSRSh (2). Generally, when RS (1048) is large, ISC ≈ IL. VOC can also be obtained: VOC = kTqln (3), it can be seen that the size of VOC is related to the size of I0, ISC, RSh.
In the experimental samples, VOC anomalies are concentrated in the silicon ultraviolet photovoltaic detector (UV-110), the basic parameters: n-type (111) silicon substrate material resistivity is about 80 ~ 1208cm; light boron diffusion surface concentration is about 1017 ~ 1018cm-3; junction depth less than 1Lm; effective photosensitive area 1cm2; spectral response range 200-1100nm.
The process flow of UV-110 is the same as that of ordinary photodiode, but in order to improve the performance of the device in the ultraviolet region, the junction depth is strictly controlled (
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