A total investment of 500 million US dollars sapphire crystal project settled in Lianyungang

[High-tech LED News] Recently, Gaogong LED reporter learned from the Administrative Committee of Lianyungang Development Zone of Jiangsu Province that the “Sapphire Crystal Project” with a total investment of US$500 million was officially signed by Hong Kong Qingpu International Co., Ltd.


Signing the contract for the Lianyungang Sapphire Crystal Project with a total investment of US$500 million

It is understood that the "Sapphire Crystal Project" will be built in three phases. Three crystal growth furnaces will be built this year. In 2012, 27 crystal growth furnaces will be built. The long-term goal of the project is to build 500 crystal growth furnaces. According to this scale, Hong Kong Qingpu International is expected to become the second largest producer of sapphire ingots and substrates in Asia after GCL.

Gaogong LED reporter immediately consulted relevant information about Hong Kong Qingpu International. He learned that Yang Shixian, general manager of Hong Kong Qingpu International, in addition to investing in the sapphire crystal growth project in Lianyungang, also recently acquired a Taiwan sapphire crystal furnace in Taiwan. Enterprise - Fu Boer International Co., Ltd.

It is reported that on February 18, the Taiwan Science Industrial Park Review Committee just reviewed and approved the investment project of Fauer International. The investment amount of the project is NT$72 million (approximately RMB 15 million). The main investor is a Changhua Kaiyi Metal Co., Ltd., which is planned to be transformed into a high value-added machinery manufacturing industry. Manager Yang Shixian once joined the company in 2010.

The sapphire crystal growth machine will be manufactured by the Kyropoulos method from Russia. The manufacturing process is a high-purity seed material prepared by refining alumina ore, added to the crucible of the crystallizer, and the furnace is pumped. The vacuum is further increased, a sapphire single crystal is grown, and the wafer rod is drilled, sliced, and ground to form a sapphire wafer.

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