Beijing, December 14, 2010 — Cree Corporation (Nasdaq: CREE), a market leader in silicon carbide power devices, today announced the availability of the latest Z-RecTM 650V junction Schottky barrier (JBS) diode series to meet The latest data center power system requirements. The new JBS diodes have a blocking voltage of 650V, which meets the requirements of recent data center power architecture modifications. According to industry consultants, this can increase energy efficiency by up to 5%. Since data center power consumption accounts for almost 10% of global annual electricity consumption, any level of energy efficiency improvement will help to significantly reduce overall energy consumption.
The conventional Switching Power Supply generally has an input voltage range of 90V~264V, and can support various AC input power sources all over the world. Existing data center power architectures typically use a three-phase/480V power supply from a local power supply unit. The three-phase/480V power supply is stepped down to a three-phase/208V power supply via a power transformer, and further processed to serve as an input power source for the server power supply. This approach reduces overall efficiency due to transformer losses.
Recent trends in data center power systems have required the elimination of the 480V to 208V buck process to increase the overall efficiency of the data center. Now the server power supply is expected to obtain a wider universal line voltage (277V+10% safe range) of 90V~305V directly from the three-phase/480V phase voltage, instead of obtaining 120V AC voltage from the three-phase/208V phase voltage. This architecture eliminates the need for step-down transformers and avoids the associated energy and cost.
For server power systems with a wide input voltage range of 90V to 305V to operate ideally, power devices like Schottky diodes are required to have a maximum blocking voltage of up to 650V. Cree's new 650V rated device provides an ideal solution for designers designing advanced data center and communications equipment power systems. Cree's new Z-Rec silicon carbide diodes not only provide the 650V blocking voltage required by these advanced power systems, but also eliminate reverse recovery losses compared to silicon devices, further reducing power consumption.
Cengiz Balkas, vice president and general manager of Cree's Power and RF Division, explains: "The silicon carbide technology is critical to the development of a new generation of advanced energy-efficient data center power system designs because it virtually eliminates the switching losses of the diodes. Loss is the main reason for the low energy efficiency of traditional silicon devices. Therefore, replacing silicon devices with silicon carbide devices can increase the efficiency of the power factor correction stage of the power supply by 2%, which can bring greater results than simple architecture modifications. Overall efficiency improvement."
The C3DXX065A series is the first in a family of 650V Z-Rec Schottky diodes available in 4A, 6A, 8A and 10A sizes, all in a TO-220-2 package. All devices are rated for operation from -55°C to +175°C.
The C3DXX065A family of devices has been fully certified and officially delivered.
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